New Hydrogen Distribution in {ital a}-Si:H: An NMR Study

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.77.2049· OSTI ID:390453

Wu, Y; Stephen, J T; Han, D X; Rutland, J M ^[1]; Crandall, R S; Mahan, A H ^[2]

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1. Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599-3255 (United States)
2. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)

Hot-filament-assisted CVD deposited {ital a}-Si:H with low H concentration and low defect density has been examined by {sup 1}H NMR. It is demonstrated for the first time that H microstructures can be altered significantly in device quality {ital a}-Si:H films. In the present films, large H clusters account for 90{percent} of the 2{endash}3 at.{percent} H atoms, with the remaining H more dispersed, but still aggregated in a small volume fraction of the material. These results suggest that an ideal {ital a}-Si:H network with low defect density and high structural stability may not necessarily be homogeneous. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 390453
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 10 Vol. 77; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
DEFECTS
DISTRIBUTION
HYDROGEN ADDITIONS
MICROSTRUCTURE
NMR SPECTRA
SILICON
THIN FILMS