Doping and van Hove singularity dependence of Raman background in {ital d}{sub {ital x}{sup 2}{minus}{ital y}{sup 2}} superconductors

Journal Article · Thu Oct 31 23:00:00 EST 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.13288· OSTI ID:389340

Branch, D; Carbotte, J P ^[1]

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1. Department of Physics and Astronomy, McMaster University Hamilton, Ontario, L8S 4M1 (CANADA)

In a two-dimensional band-structure model, the effect of doping on the Raman electronic background of a superconductor with {ital d}{sub {ital x}{sup 2}{minus}{ital y}{sup 2}} gap symmetry is studied. Emphasis is placed near optimum doping and on the role of the van Hove singularity. The relationship between peaks in the Raman spectrum for three often discussed photon geometries and the gap is studied. No simple relationship exists, although the {ital B}{sub 1{ital g}} mode can show many of the features of the quasiparticle density of states. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 389340
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 18 Vol. 54; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
D WAVES
ELECTRONIC STRUCTURE
ENERGY GAP
ENERGY-LEVEL DENSITY
RAMAN SPECTRA
SINGULARITY
SUPERCONDUCTORS
TRANSITION TEMPERATURE