Low-temperature transport properties of the mixed-valence semiconductor Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3}
- Research and Development Division, Marlow Industries, Dallas, Texas 75238 (United States)
- Materials Physics Branch, Naval Research Laboratory, Washington, DC 20375 (United States)
- Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
We have measured the transport properties of Ru{sub 0.5}Pd{sub 0.5}Sb{sub 3} from 300 down to 4 K and compared them to those of the binary-skutterudite antimonides. In particular, the lattice thermal conductivity of this compound is substantially lower than that of CoSb{sub 3} and IrSb{sub 3}. This is attributed to the mixed-valency of ruthenium in this compound. Using near-edge extended absorption fine structure analysis, it is observed that ruthenium in this compound is in the Ru{sup 4+}- and Ru{sup 2+}-valence states in approximately equal proportions. The potential for thermoelectric applications of this material is also discussed. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 389267
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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