Observation of large low-field magnetoresistance in trilayer perpendicular transport devices made using doped manganate perovskites
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)
We report on the fabrication of a new class of trilayer epitaxial thin film devices based on the doped perovskite manganates La{endash}Ca{endash}Mn{endash}O and La{endash}Sr{endash}Mn{endash}O. We show that large resistance changes, up to a factor of 2, can be induced by a moderate applied magnetic field below 200 Oe in these trilayers supporting current-perpendicular-to-plane transport. These results show that low-field spin-dependent transport in manganates can be accomplished, the magnitude of which is suitable for magnetoresistive field sensors. {copyright} {ital 1996 American Institute of Physics.}
- OSTI ID:
- 389260
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 69; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
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