High-temperature superconducting Josephson fluxon{endash}antifluxon transistors

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118028· OSTI ID:389258

Berkowitz, S J; Zhang, Y M; Mallison, W H; Char, K ^[1]; Terzioglu, E; Beasley, M R ^[2]

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1. Conductus Inc., Sunnyvale, California 94086 (United States)
2. Ginzton Laboratory, Stanford University, Stanford, California 94305 (United States)

We have realized the Josephson fluxon{endash}antifluxon transistor (JFAT) in high temperature superconductivity using an asymmetric control line on top of either bicrystal junctions or Co-doped YBa{sub 2}Cu{sub 3}O{sub {ital x}} superconductor{endash}normal{endash}superconductor (SNS) junctions. We have measured current gains as high as 6 for 30 {mu}m-wide bicrystal JFATs (30 K) and as high as 3 for Co-doped SNS JFATs (50 K). An improvement in gain over the Josephson vortex flow transistor, due to improved coupling efficiency, is demonstrated. There is also a reduction of control line inductance that should lead to an improvement in gate speed. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 389258
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BARIUM OXIDES
COBALT ADDITIONS
COPPER OXIDES
FLUX QUANTIZATION
FLUXONS
HIGH-TC SUPERCONDUCTORS
JOSEPHSON JUNCTIONS
SUPERCONDUCTING DEVICES
TRANSISTORS
YTTRIUM OXIDES