Microstructure, electrical properties, and thermal stability of Al ohmic contacts to {ital n}-GaN
- Materials Research Center, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)
- Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)
- Argonne National Laboratory, Argonne, Illinois 60439 (United States)
As-deposited Al contacts were ohmic with a room-temperature contact resistivity of 8.6{times}10{sup {minus}5} {Omega}{center_dot}cm{sup 2} on Ge-doped, highly {ital n}-type GaN ({ital n}=5{times}10{sup 19} cm{sup {minus}3}). They remained thermally stable to at least 500{degree}C, under flowing N{sub 2} at atmospheric pressure. The specific contact resistivities ({rho}{sub {ital c}}) calculated from TLM measurements on as-deposited Al layers were found to range from 8.6{times}10{sup {minus}5} {Omega}{center_dot}cm{sup 2} at room temperature and 6.2{times}10{sup {minus}5} {Omega}{center_dot}cm{sup 2} at 500{degree}C. Annealing treatments at 550{degree}C and 650{degree}C for 60 s each under flowing N{sub 2} resulted in an overall increase of contact resistivity. Cross-sectional, high-resolution electron microscopy (HREM) revealed that interfacial secondary phase formation occurred during high-temperature treatments, and coincided with the degradation of contact performance. Electron diffraction patterns from the particles revealed a cubic structure with lattice constant {ital a}=0.784 nm, and faceting occurring on the {l_brace}100{r_brace} faces. Spectroscopic analysis via (electron energy loss) spectroscopy (EELS) revealed the presence of nitrogen and small amounts of oxygen in the Al layer, but no appreciable amounts of Ga. The results of microstructural and crystallographic characterization indicate that the new interfacial phase is a type of spinel Al nitride or Al oxynitride. {copyright} {ital 1996 Materials Research Society.}
- OSTI ID:
- 389020
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 9 Vol. 11; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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