Ramp-type YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} Josephson junctions with high characteristic voltage, fabricated by a new, completely {ital in} {ital situ}, growth technique

Journal Article · Fri Nov 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117323· OSTI ID:388154

Strikovskiy, M D; Engelhardt, A ^[1]

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1. Institut fuer Schicht-und Ionentechnik (ISI), Forschungszentrum Juelich (KFA), 52425 Juelich (Germany)

We have fabricated YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/PrBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}}/YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} ramp-type Josephson junctions with high characteristic voltage {ital V}{sub {ital c}}={ital I}{sub {ital cR}}{sub {ital n}} at a temperature of 77 K. A microshadow mask technique was used to grow completely {ital in} {ital situ} a ramp-type multilayer structure. Junctions with barrier thicknesses of about 13 and 45 nm were characterized. Junctions with a thicker barrier exhibited supercurrent up to 80 K and showed a resistively shunted-junction-like current voltage characteristics with a {ital V}{sub {ital c}} as high as {approximately}1.5 mV at 77 K and 16 mV at 15 K. Junctions with a thinner barrier worked up to 90 K and exhibited the ac Josephson effect at 77 K under 8.9 GHz microwave radiation. {copyright} {ital 1996 American Institute of Physics.}

• OSTI ID: 388154
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 69; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM OXIDES
COPPER OXIDES
CRITICAL CURRENT
FABRICATION
JOSEPHSON JUNCTIONS
LAYERS
LITHOGRAPHY
MASKING
MULTILAYERS
PRASEODYMIUM OXIDES
YTTRIUM OXIDES