A general approach to the epitaxial growth of rare-earth- transition-metal films

Journal Article · Tue Oct 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.117663· OSTI ID:385635

Fullerton, E E; Sowers, C H; Pearson, J P; Bader, S D ^[1]; Wu, X Z ^[2]; Lederman, D ^[3]

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1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Department of Physics, Northern Illinois University, De Kalb, Illinois 60115 (United States)
3. Department of Physics, West Virginia University, Morgantown, West Virginia 26506-6315 (United States)

The growth of epitaxial rare-earth-transition-metal thin films is reported by magnetron sputtering on single-crystal MgO substrates. The use of epitaxial W buffer layers demonstrates a general approach to control the phase and orientation of the films. Structure and magnetism results for SmFe{sub 12}(001) on W(100) and magnetically hard Sm{sub 2}Co{sub 7} (110) and (001) on W(100) and (110), respectively, are highlighted to illustrate the utility of the approach. {copyright} {ital 1996 American Institute of Physics.}

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 385635
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 69; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
COBALT ALLOYS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
EPITAXY
IRON ALLOYS
MAGNETIC ANISOTROPY
MAGNETIC PROPERTIES
SAMARIUM ALLOYS
SPUTTERING
THIN FILMS