Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO{sub 2}

Journal Article · Sun Sep 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116870· OSTI ID:383730

Min, K S; Shcheglov, K V; Yang, C M; Atwater, H A ^[1]; Brongersma, M L; Polman, A ^[2]

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1. Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125 (United States)
2. FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam (the Netherlands)

Two sources of room temperature visible luminescence are identified from SiO{sub 2} films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe{sup +}-implanted SiO{sub 2} films and SiO{sub 2} films containing Si nanocrystals, a luminescence feature attributable to defects in the SiO{sub 2} matrix is unambiguously identified. Hydrogen passivation of the films selectively quenches the matrix defect luminescence, after which luminescence attributable to Si nanocrystals is evident, with a lifetime on the order of milliseconds. The peak energy of the remaining luminescence attributable to Si nanocrystals {open_quote}{open_quote}redshifts{close_quote}{close_quote} as a function of different processing parameters that might lead to increased nanocrystal size and the intensity is directly correlated to the formation of Si nanocrystals. Upon further annealing hydrogen-passivated samples at low temperatures ({lt}500{degree}C), the intensity of nanocrystal luminescence increases by more than a factor of 10. {copyright} {ital 1996 American Institute of Physics.}

• DOE Contract Number: FG03-89ER45395
• OSTI ID: 383730
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 69; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEFECTS
EMISSION SPECTRA
EXCITONS
HYDROGEN ADDITIONS
ION BEAMS
PHOTOLUMINESCENCE
RED SHIFT
SILICON
SILICON OXIDES
SYNTHESIS
VISIBLE RADIATION