Valence-band electronic structure of MoS{sub 2} and Cs/MoS{sub 2}(0002) studied by angle-resolved x-ray photoemission spectroscopy
- Zettlemoyer Center for Surface Studies and Department of Chemistry, Lehigh University, Bethlehem, Pennsylvania 18015 (United States)
The angle dependence of the valence-band photoemission from the trigonal prismatic layered MoS{sub 2} shows both the forward-scattering features normally observed in core-level photoelectron diffraction and, in addition, the {ital initial-state orbital character associated with partially occupied, nonbonding} {ital Mo}{sup {ital IV}}(4{ital d}{sub {ital z}{sup 2}}+4{ital d}{sub {ital x}{sup 2}{minus}{ital y}{sup 2}} +4{ital d}{sub {ital xy}}) {ital orbitals near the top of the valence band}. The difference in forward scattering between the Mo and S emitters is also used to assess relative contributions from the Mo and S atomic orbitals at specific binding energies within the valence band. Deposition of cesium (0.23 ML Cs with 1 ML equal to the Cs saturation coverage) onto the basal plane of MoS{sub 2} introduces a density of states at 1.25 eV above the top of the valence-band maximum. The intensity anisotropy for this Cs-induced valence level is interpreted via the angle dependence of the electric dipole matrix element as due to the initial-state orbital character at the bottom of the conduction band of the Cs/MoS{sub 2} heterostructure. {copyright} {ital 1996 The American Physical Society.}
- OSTI ID:
- 383214
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 54; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
Similar Records
Surface structure of single-crystal MoS{sub 2}(0002) and Cs/MoS{sub 2}(0002) by X-ray photoelectron diffraction
Resonant photoelectron spectroscopy at the Mo 4 p r arrow 4 d absorption edge in MoS sub 2