ICP etching of GaAs via hole contacts
Conference
·
OSTI ID:378167
- Sandia National Labs., Albuquerque, NM (United States)
- University of Florida, Gainesville, FL (United States)
- Plasma-Therm Inc., St. Petersburg, FL (United States)
Deep etching of GaAs is a critical process step required for many device applications including fabrication of through-substrate via holes for monolithic microwave integrated circuits (MMICs). Use of high-density plasmas, including inductively coupled plasmas (ICP), offers an alternative approach to etching vias as compared to more conventional parallel plate reactive ion etch systems. This paper reports ICP etching of GaAs vias at etch rates of about 5.3 {mu}m/min with via profiles ranging from highly anistropic to conical.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 378167
- Report Number(s):
- SAND--96-1901C; CONF-961040--1; ON: DE96013184
- Country of Publication:
- United States
- Language:
- English
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