A study of loop evolution during inert ambient annealing and reaction between point defects and dislocation loops during oxidation of silicon
- Univ. of Florida, Gainesville, FL (United States). Dept. of Materials Science and Engineering
In the first part of this work, a plan-view TEM study has been made of the time-dependent annealing behavior of end of range (type II) dislocation loops introduced by 1 {times} 10{sup 15}/cm{sup 2} 50 KeV Si{sup +} implantation into silicon. The activation energy for loop growth was determined to be 1.0 {+-} 0.2 eV from the Arrhenius plot of loop growth rate versus the reciprocal of annealing temperature. In the second part of this study, a thin boron layer was used as a diffusion monitor. The number of injected interstitials as a result of oxidation was measured by TEM. The diffusivity of boron with and without the presence of loops was studied by fitting experimental SIMS profiles with FLOOPS simulations. The interaction between loops and interstitials was determined to be diffusion limited.
- OSTI ID:
- 375952
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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