C{sub x}N{sub 1{minus}x} thin films prepared by mass separated ion beam deposition

Conference · Sun Dec 31 04:00:00 EST 1995

OSTI ID:375927

Hofsaess, H C; Ronning, C; Griesmeier, U; Gross, M ^[1]

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1. Univ. Konstanz (Germany). Fakultaet fuer Physik

The authors have studied the growth and the properties of CN films prepared by deposition of mass separated {sup 12}C{sup +} and {sup 14}N{sup +} ions. The film thickness and density were determined as a function of ion energy between 20 eV. IR absorption measurements indicate predominantly C{single_bond}N and C{double_bond}N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

• OSTI ID: 375927
• Report Number(s): CONF-941144--; ISBN 1-55899-255-3
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON 12
CARBON NITRIDES
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ENERGY BEAM DEPOSITION
ENERGY DEPENDENCE
NITROGEN 14
PHYSICAL PROPERTIES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K