Photocorrosion and passivation of n-GaAs: A comparison of the (100), (110), and (111)B faces
Conference
·
OSTI ID:370790
- Univ. of Oregon, Eugene, OR (United States)
The focus of recent work has been toward understanding the mechanisms of photocorrosion and passivation in semiconductor/liquid junction photoelectrochemical cells; in particular, those based on n-GaAs. Surface trapping velocities, obtained from time resolved photoluminescence measurements (PL decays) before and after photocorrosion are used to assess the rate and degree of photocorrosion, while voltage dependent photoluminescence and photocurrent measurements can provide insight into the nature of photoinduced traps. Results will be presented which show the effects of various factors on the integrity of the interface, including crystal face orientation and electrolyte composition. A comparison will be made between the behavior of the (111)B face and results for the (100) and (110) faces in terms of the surface trapping velocities, rate of photocorrosion, and degree of passivation.
- OSTI ID:
- 370790
- Report Number(s):
- CONF-960376--
- Country of Publication:
- United States
- Language:
- English
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