Trace analysis by TXRF
Journal Article
·
· Advances in X-Ray Analysis
- Charles Evans & Associates, Redwood City, CA (United States)
Total reflection X-Ray Fluorescence (TXRF) originally was developed for trace analysis of small residues but has become a widespread method for measuring trace surface metal contamination an semiconductor substrates. It is estimated that approximately 100 TXRF instruments are in se in the semiconductor industry worldwide, and approximately half that for residue analysis x analytical laboratories. TXRF instrumentation is available today for reaching detection limits d the order of 10{sup 9} atoms/cm{sup 2}. This review emphasizes some of the more recent developments in TXRF for trace analysis, in particular with the use of synchrotron x-ray sources (SR-TXRF). There is some promise of reaching 10{sup 7} atoms/cm{sup 2} detection limits for surface analysis of semi-conductor substrates. 19 refs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 369872
- Report Number(s):
- CONF-9408178--
- Journal Information:
- Advances in X-Ray Analysis, Journal Name: Advances in X-Ray Analysis Vol. 38; ISSN AXRAAA; ISSN 0376-0308
- Country of Publication:
- United States
- Language:
- English
Similar Records
Performances of the TXRF Beamline for Trace Element Mapping at the European Synchrotron Radiation Facility
Total reflection x-ray fluorescence (TXRF)
Total reflection x-ray fluorescence: Determination of an optimum geometry
Journal Article
·
Tue Aug 26 00:00:00 EDT 2003
· AIP Conference Proceedings
·
OSTI ID:20632614
Total reflection x-ray fluorescence (TXRF)
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:375963
Total reflection x-ray fluorescence: Determination of an optimum geometry
Technical Report
·
Mon Mar 31 23:00:00 EST 1997
·
OSTI ID:603705