Dynamic crack propagation in single-crystalline silicon
- Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)
- Univ. Stuttgart (Germany). Institut fuer Metallkunde
Tensile tests on notched plates of single-crystalline silicon were carried out at high overloads. Cracks were forced to propagate on {l_brace}110{r_brace} planes in a {l_angle}1{bar 1}0{r_angle} direction. The dynamics of the fracture process was measured using the potential drop technique and correlated with the fracture surface morphology. Crack propagation velocity did not exceed a terminal velocity of v{sub c} = 3,800 m/s, which corresponds to 83% of the Rayleigh wave velocity v{sub R}. Specimens fractured at low stresses exhibited crystallographic cleavage whereas a transition from mirror-like smooth regions to rougher hackle zones was observed in case of the specimens fractured at high stresses. Inspection of the mirror zone at high magnification revealed a deviation of the {l_brace}110{r_brace} plane onto {l_brace}111{r_brace}crystallographic facets.
- OSTI ID:
- 364066
- Report Number(s):
- CONF-981104-; TRN: IM9934%%91
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society, Boston, MA (United States), 30 Nov - 4 Dec 1998; Other Information: PBD: 1999; Related Information: Is Part Of Fracture and ductile vs. brittle behavior -- Theory, modeling and experiment; Beltz, G.E. [ed.] [Univ. of California, Santa Barbara, CA (United States)]; Selinger, R.L.B. [ed.] [Catholic Univ., Washington, DC (United States)]; Kim, K.S. [ed.] [Brown Univ., Providence, RI (United States)]; Marder, M.P. [ed.] [Univ. of Texas, Austin, TX (United States)]; PB: 345 p.; Materials Research Society symposium proceedings, Volume 539
- Country of Publication:
- United States
- Language:
- English
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