Dendrite growth processes of silicon and germanium from highly undercooled melts

Journal Article · Sat May 01 04:00:00 EDT 1999 · Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science

DOI:https://doi.org/10.1007/s11661-999-0282-7· OSTI ID:363992

Aoyama, Tomotsugu; Takamura, Yuzuru; Kuribayashi, Kazuhiko ^[1]

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1. Inst. of Space and Astronautical Science, Kanagawa (Japan)

The crystal growth behavior of a semiconductor from a very highly undercooled melt is expected to be different from that of a metal. In the present experiment, highly pure undoped Si and Ge were undercooled by an electromagnetic levitation method, and their crystal growth velocities (V) were measured as a function of undercooling ({Delta}T). The value of V increased with {Delta}T, and V = 26 m/s was observed at {Delta}T = 260 K for Si. This result corresponds well with the predicted value based on the dendrite growth theory. The growth behaviors of Si and Ge were found to be thermally controlled in the measured range of undercooling. The microstructures of samples solidified from undercooled liquid were investigated, and the amount of dendrites immediately after recalescence increased with undercooling. The dendrite growth was also observed by a high-speed camera.

• Sponsoring Organization: USDOE
• OSTI ID: 363992
• Journal Information: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science, Journal Name: Metallurgical and Materials Transactions. A, Physical Metallurgy and Materials Science Journal Issue: 5 Vol. 30; ISSN 1073-5623; ISSN MMTAEB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COOLING
CRYSTAL GROWTH
DENDRITES
GERMANIUM
LEVITATION
LIQUIDS
SEMICONDUCTOR MATERIALS
SILICON
VELOCITY