Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.83.741· OSTI ID:357315

Munkholm, A ^[1]; Stephenson, G B; Eastman, J A; Thompson, C; Auciello, O ^[2]; Thompson, C ^[3]; Fini, P; Speck, J S; DenBaars, S P ^[4]; Fuoss, P H ^[5]

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1. Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
3. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 (United States)
4. Materials Department, University of California, Santa Barbara, California 93106 (United States)
5. ATT Laboratories---Research, Florham Park, New Jersey 07932 (United States)

We report the first observation of the atomic-scale structure of the GaN(0001) surface in the metal-organic chemical vapor deposition environment. Measurements were performed using {ital in situ} grazing-incidence x-ray scattering. We determined the surface equilibrium phase diagram as a function of temperature and ammonia partial pressure, which contains two phases with 1{times}1 and ({radical} (3) {times}2{radical} (3) )R30{degree} symmetries. The ({radical} (3) {times}2{radical} (3) )R30{degree} phase is found to have a novel {open_quotes}missing row{close_quotes} structure with 1/3 of the surface Ga atoms absent. {copyright} {ital 1999} {ital The American Physical Society }

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 357315
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 4 Vol. 83; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL VAPOR DEPOSITION
GALLIUM NITRIDES
PARTIAL PRESSURE
PHASE DIAGRAMS
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION