Anti-Stokes photoluminescence in colloidal semiconductor quantum dots

Journal Article · Sun Aug 01 00:00:00 EDT 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.124570· OSTI ID:357264

Poles, E; Selmarten, D C; Micic, O I; Nozik, A J ^[1]

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1. National Renewable Energy Laboratory, Center for Basic Sciences, Golden, Colorado 80401 (United States)

We report anti-Stokes photoluminescence (photon energy up-conversion) from size-quantized CdSe and InP nanocrystalline colloids. The observed up-conversion is highly efficient and occurs at very low excitation intensities. With low temperatures the intensity of the up-converted photoluminescence decreases while that of the usual Stokes photoluminescence increases; the up-converted photoluminescence is also restricted to energies corresponding to the band gaps of the quantum dots that are present in the colloid ensemble. The anti-Stokes photoluminescence is explained by a model that involves surface states. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 357264
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 75; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM COMPOUNDS
COLLOIDS
ENERGY CONVERSION
ENERGY GAP
INDIUM COMPOUNDS
PHOTOLUMINESCENCE
SEMICONDUCTOR JUNCTIONS
TEMPERATURE DEPENDENCE