Anomalous effect of trench-oxide depth on alpha-particle-induced charge collection
Journal Article
·
· IEEE Electron Device Letters
- Ewha Womans Univ., Seoul (Korea, Republic of). Dept. of Electronic Engineering
The effect of trench-oxide depth on the alpha-particle-induced charge collection is analyzed for the first time. From the simulation results, it was found that the depth of trench oxide has a considerable influence on the amount of collected charge. The confining of generated charge by the trench oxide was identified as a cause of this anomalous effect. Therefore, the tradeoff between soft error rate and cell to cell isolation characteristics should be considered in optimizing the depth of trench oxide.
- OSTI ID:
- 355658
- Journal Information:
- IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 6 Vol. 20; ISSN 0741-3106; ISSN EDLEDZ
- Country of Publication:
- United States
- Language:
- English
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