Laser-stimulated luminescence of yttria-stabilized cubic zirconia crystals

Journal Article · Sat May 01 04:00:00 EDT 1999 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.370192· OSTI ID:347054

Petrik, N G; Taylor, D P; Orlando, T M ^[1]

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1. W. R. Wiley Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, MS K8-88, P.O. Box 999, Richland, Washington 99352 (United States)

The kinetics of laser-stimulated luminescence (LSL) of yttria-stabilized cubic zirconia single crystals is investigated. Excitation of ZrO{sub 2}{center_dot}9.5{percent}Y{sub 2}O{sub 3}(100) and (110) using ns pulses of 213 nm (5.82 eV), 266 nm (4.66 eV), and 355 nm (3.49 eV) photons produce LSL bands with Gaussian profiles and peak maxima at 460 nm (2.69 eV), 550 nm (2.25 eV), and 600 nm (2.07 eV), respectively. LSL involves a single-photon process for energy densities below {approximately}1.0 MW/cm{sup 2}. Decay times vary from 0.1 to 100 {mu}s depending on the excitation energy and temperature. Decay kinetics are hyperbolic indicating that all LSL bands result from recombination. The LSL quenches with increasing temperature and activation energies obtained using the Mott approximation are 0.10{plus_minus}0.01, 0.20{plus_minus}0.02, and 0.45{plus_minus}0.04eV for the 2.69, 2.25, and 2.07 eV LSL bands, respectively. The various activation energies, decay kinetics, and excitation/emission energies correspond to the presence of several emission centers which can be associated with anion vacancies. We tentatively assign these to intrinsic {ital F} centers and extrinsic {ital F}-type centers. The latter are associated with one and two Y{sup 3+} ions in the nearest neighborhood positions. Since the normalized temperature dependencies of the decay coefficients are similar for all the LSL bands, we suggest that recombination primarily involves electrons, trapped at intrinsic and extrinsic defect sites, and mobilized holes. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 347054
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 85; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
EXCITATION
LASER RADIATION
PHOTOLUMINESCENCE
RECOMBINATION
TEMPERATURE DEPENDENCE
ULTRAVIOLET RADIATION
YTTRIUM COMPOUNDS
YTTRIUM OXIDES
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES