Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Impedance reduction mechanisms in a magnetically immersed electron diode

Conference ·
OSTI ID:346874
 [1]
  1. Mission Research Corp., Albuquerque, NM (United States)

The successful operation of a magnetically-immersed electron diode using inductive-voltage-adder (IVA) technology for radiography requires a stable impedance for > 30 ns. In an IVA, the voltages from many acceleration gaps are added in series along a magnetically-insulated transmission line. The final voltage is applied to a thin needle that is immersed in a 10--50 Tesla solenoidal magnetic field. An electron beam is produced in a small spot at the anode target (<2 mm) with high current (30--50 kA) and energy (>10 MV). The electron current flowing off the needle is determined by the space-charge limited flow in a long pipe. Ion-emitting plasmas are produced from direct beam heating of the target and from radiation emitted from the several eV target surface that heats the outer walls of the anode (1--4.5-cm radius). Plasma ions are attracted to the electron beam and provide a degree of charge neutralization. The presence of these neutralizing ions reduces the diode impedance (nominally 300 Ohms), enhancing the electron current. The author is studying the impedance reduction mechanisms with the hybrid simulation code IPROP. He finds ions emitted from the anode walls lead to a reduced but stable impedance consistent with bipolar flow. If the ions are permitted to strip in ion-ion collisions, however, a runaway loss of impedance occurs that provides diode current well above the bipolar limit. Assuming nitrogen ion emission, he has qualitatively reproduced impedance behavior observed in experiments on the Hermes III IVA accelerator at Sandia National Laboratories. Several mitigation schemes are being investigated.

Sponsoring Organization:
Sandia National Labs., Albuquerque, NM (United States)
OSTI ID:
346874
Report Number(s):
CONF-980601--
Country of Publication:
United States
Language:
English