Growth of diamond films by ECR plasma enhanced chemical vapor deposition
- Polytechnic Univ., Farmingdale, NY (United States). Dept. of Electrical Engineering
- TRW Electronics Systems and Technology Division, Redondo Beach, CA (United States)
ECR plasma-assisted chemical vapor deposition (PACVD) is a technique currently receiving much interest because the ECR plasma system offers a more complex parameter space than the conventional PACVD process. An ECR system for PACVD of diamond film is designed and setup. The general operating parameters of this ECR plasma system are: microwave frequency -- 245 GHz, microwave power -- 300--500 W, resonance magnetic field -- 875 Gauss, pressure -- 10{sup {minus}4}--10{sup {minus}3} torr, and flow rate -- up to 10 sccm. In the operation, no dc bias was applied to the substrate. Substrate location is about 2--3 in. below the quartz window, where the microwave is incident and the ECR layer is generated. The substrate temperature is about 600 C, and the gas mixture is 2% of CH{sub 4} in H{sub 2} gas (pre-mixed). After a few hours of surface treatment by the ECR produced energetic ions, the low pressure ECR plasma operation is switched, in situ, to a moderate pressure microwave plasma (0.1--1 torr). The process of PACVD of diamond film was continued for about 15 hours. Structural information on the film was obtained using x-ray diffraction. The 76{degree} scattering peak from the diamond (220) crystalline was measured.
- OSTI ID:
- 346851
- Report Number(s):
- CONF-980601--
- Country of Publication:
- United States
- Language:
- English
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