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Title: Effects of the Ti/Al atomic ratio on the properties of gradient (Ti,Al)N films synthesized by ion beam assisted deposition

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
DOI:https://doi.org/10.1116/1.590649· OSTI ID:336665
; ;  [1]
  1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Gradient (Ti,Al)N films were prepared on high speed steel (HSS) and Si (111) wafers by using two Ar{sup +} beams to sputter a titanium target and an aluminum target separately, and a third N{sup +} beam to simultaneously bombard the growing film to assist deposition. The effects of the Ti/Al atomic ratio in the films on properties such as hardness, stress, and adhesion strength were investigated systematically. The results indicated that both the hardness and the adhesion of gradient (Ti,Al)N films to steel substrates exhibited {open_quotes}peak{close_quotes} type changes with an increase of the Ti/Al atomic ratio, and a maximum hardness of 3780thinspkgfthinspmm{sup {minus}2} was reached at a Ti/Al ratio of 5.35. The compressive stress of gradient (Ti,Al)N films increased with increasing Al content in the films. It was found that extreme hardness, high adhesion strength and low stress gradient (Ti,Al)N films can be synthesized on low temperature HSS steel by using the ion beam assisted deposition process.

OSTI ID:
336665
Report Number(s):
CONF-9806211-; ISSN 0734-211X; TRN: 9908M0091
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 17, Issue 2; Conference: 4. international plasma-based ion implantation workshop, Dearborn, MI (United States), 2-4 Jun 1998; Other Information: PBD: Mar 1999
Country of Publication:
United States
Language:
English