Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Method of assembly of molecular-sized nets and scaffolding

Patent ·
OSTI ID:335505

The present invention relates to methods and starting materials for forming molecular-sized grids or nets, or other structures based on such grids and nets, by creating molecular links between elementary molecular modules constrained to move in only two directions on an interface or surface by adhesion or bonding to that interface or surface. In the methods of this invention, monomers are employed as the building blocks of grids and more complex structures. Monomers are introduced onto and allowed to adhere or bond to an interface. The connector groups of adjacent adhered monomers are then polymerized with each other to form a regular grid in two dimensions above the interface. Modules that are not bound or adhered to the interface are removed prior to reaction of the connector groups to avoid undesired three-dimensional cross-linking and the formation of non-grid structures. Grids formed by the methods of this invention are useful in a variety of applications, including among others, for separations technology, as masks for forming regular surface structures (i.e., metal deposition) and as templates for three-dimensional molecular-sized structures. 9 figs.

Research Organization:
University of Colorado
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
FG03-94ER12141
Assignee:
Univ. of Colorado, Boulder, CO (United States)
Patent Number(s):
US 5,876,830/A/
Application Number:
PAN: 8-711,448
OSTI ID:
335505
Country of Publication:
United States
Language:
English

References (1)

The “Molecular Tinkertoy” Approach to Materials book January 1995

Similar Records

Method of assembly of molecular-sized nets and scaffolding
Patent · Thu Dec 31 23:00:00 EST 1998 · OSTI ID:872169

Photonic polymer-blend structures and method for making
Patent · Tue Jun 29 00:00:00 EDT 2004 · OSTI ID:1174924

Adatom pairing structures for Ge on Si(100): The initial stage of island formation
Journal Article · Thu Nov 20 23:00:00 EST 1997 · Science · OSTI ID:569324