Three-dimensional architecture for solid state radiation detectors
A radiation-damage resistant radiation detector is formed on a substrate formed of a material doped with a first conductivity type dopant. The detector includes at least one first electrode formed of first conductivity type dopant, and at least one second electrode that is spaced-apart from the first electrode and formed of a second conductivity type dopant. Each first and second electrode penetrates into the substrate from a substrate surface, and one or more electrodes may penetrate entirely through the substrate, that is traversing from one surface to the other surface. Particulate and/or electromagnetic radiation penetrating at least a surface of the substrate releases electrons and holes in substrate regions. Because the electrodes may be formed entirely through the substrate thickness, the released charges will be a relatively small distance from at least a portion of such an electrode, e.g., a distance less than the substrate thickness. The electrons and/or holes traverse the small distance and are collected by said electrodes, thus promoting rapid detection of the radiation. By providing one or more electrodes with a dopant profile radially graded in a direction parallel to a substrate surface, an electric field results that promotes rapid collection of released electrons and said holes. Monolithic combinations of such detectors may be fabricated including CMOS electronics to process radiation signals. 45 figs.
- Research Organization:
- Univ. of Hawaii, Honolulu, HI (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- FG03-94ER40833
- Assignee:
- Univ. of Hawaii, Honolulu, HI (United States)
- Patent Number(s):
- US 5,889,313/A/
- Application Number:
- PAN: 8-796,273; TRN: 99:004573
- OSTI ID:
- 335482
- Resource Relation:
- Other Information: PBD: 30 Mar 1999
- Country of Publication:
- United States
- Language:
- English
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