Extended quantum confinement/luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films

Journal Article · Tue Dec 01 04:00:00 EST 1998 · Materials Research Bulletin

DOI:https://doi.org/10.1016/S0025-5408(98)00182-2· OSTI ID:329102

Qin, G G ^[1]

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1. Peking Univ., Beijing (China). Dept. of Physics

Through analysis of the latest experimental results reported in the literature and obtained in the laboratory, the authors have extended their previous quantum confinement/luminescence center model for the photoluminescence mechanism of porous Si and of nanometer-silicon-particle-embedded Si oxide films (G.G. Qin and Y.Q. Jia, Solid State Commun. 86, 559 (1993)). They consider that there are three main types of competitive photoexcitation/photoemission processes and that the process in which photoexcitation occurs in the nanometer silicon particles (NSPs) while photoemission occurs in the luminescence centers (LCs) in the SiO{sub x} layers very close to the NSPs is usually the major one. They discuss under what conditions the other two types of processes will dominate. They believe that the extended quantum confinement/luminescence center model is a physical model that is suitable for the photoluminescence from silicon oxide films embedded with NSPs or nanometer Ge particles (NGPs), as well as from oxidized porous Si.

• OSTI ID: 329102
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 12 Vol. 33; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPOSITE MATERIALS
EXCITATION
GERMANIUM
OPTICAL MODELS
PARTICULATES
PHOTOEMISSION
PHOTOLUMINESCENCE
SILICON
SILICON OXIDES