Confinement and electron-phonon interactions of the E{sub 1} exciton in self-organized Ge quantum dots

Journal Article · Sun Jan 31 23:00:00 EST 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.59.4980· OSTI ID:328564

Kwok, S H; Yu, P Y ^[1]; Tung, C H; Zhang, Y H ^[2]; Li, M F ^[3]; Peng, C S; Zhou, J M ^[4]

---

1. Department of Physics, University of California, Berkeley, California 94720 (United States)
2. Department of Failure Analysis and Reliability, Institute of Microelectronics, 11 Science Park Road, Science Park II, (Singapore) 117685
3. Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, (Singapore) 119260
4. Institute of Physics and Center of Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 603 (36), Beijing 100080, Peoples Republic of (China)

We have utilized resonant Raman scattering to investigate the phonon modes of self-organized Ge quantum dots grown by molecular-beam epitaxy. Both Ge-Ge and Si-Ge phonon modes are found to exhibit strong enhancements at the E{sub 1} exciton. The strain in the quantum dots deduced from the phonon energies is consistent with the results of high-resolution transmission electron microscopy. An upper bound on the confinement energy of the E{sub 1} exciton in quantum dots was deduced. The enhancement strength in the Si-Ge phonon indicates strong interaction between this mode and the E{sub 1} exciton of the Ge dots. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 328564
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 59; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRON-PHONON COUPLING
EXCITONS
GERMANIUM
INTERFACES
MOLECULAR BEAM EPITAXY
RAMAN EFFECT
RAMAN SPECTRA
SILICON
STRAINS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY