Electrical performance and radiation sensitivity of stacked PMOS dosimeters under bulkbias control

Journal Article · Tue Dec 01 04:00:00 EST 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.736516· OSTI ID:323947

O`Connell, B; Conneely, C; Carthy, C M; Doyle, J; Lane, W ^[1]; Adams, L ^[2]

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1. UCC, Cork (Ireland). National Microelectronics Research Centre
2. ESTEC, Noordwijk (Netherlands)

A new method for biasing stacked PMOS dosimeters has shown the potential for increased radiation dose range. This method involves control of the output voltage of stacked depletion mode RADFETs by an appropriate bulkbias. Radiation sensitivity measurement has shown impressive results where 84mV/rad sensitivity has been demonstrated. The possibility of a Zero Temperature Coefficient (ZTC) bulkbias may also prove attractive. Simulation and measurement are in close agreement indicating that proposed device geometry changes should further reduce the output voltage while maintaining milli-rad radiation sensitivity capability. Simulation shows that radiation sensitivity of up to 120 mV/rad can be achieved with proposed Width/Length (W/L) device geometry changes.

• OSTI ID: 323947
• Report Number(s): CONF-980705--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN IETNAE; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DOSEMETERS
ELECTRIC POTENTIAL
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION DOSES
SENSITIVITY