Evaluation of proposed hardness assurance method for bipolar linear circuits with enhanced low dose rate sensitivity (ELDRS)
- RLP Research, Albuquerque, NM (United States)
- Naval Surface Warfare Center, Crane, IN (United States)
- Defense Special Weapons Agency, Alexandria, VA (United States)
Data are presented on several low dose rate sensitive bipolar linear circuits to evaluate a proposed hardness assurance method. The circuits include primarily operational amplifiers and voltage comparators with a variety of sensitive components and failure modes. The proposed method, presented in 1997, includes an option between a low dose rate test at 10 mrd(Si)/s and room temperature and a 100 C elevated temperature irradiation test at a moderate dose rate. The results of this evaluation demonstrate that a 10 mrd(Si)/s test is able (in all but one case) to bound the worst case response within a factor of 2. For the moderate dose rate, 100 C test the worst case response is within a factor of 3 for 8 of 11 circuits, and for some circuits overpredicts the low dose rate response. The irradiation bias used for these tests often represents a more degrading bias condition than would be encountered in a typical space system application.
- OSTI ID:
- 323945
- Report Number(s):
- CONF-980705--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 45; ISSN IETNAE; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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