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Title: A way to improve dose rate laser simulation adequacy

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.736511· OSTI ID:323944
; ;  [1]
  1. Specialized Electronic Systems, Moscow (Russian Federation)

A method for improving laser simulation of dose rate radiation in silicon IC`s (Integrated Circuit) is analyzed based on the application of noncoherent laser radiation. Experimental validation was performed using test structures with up to 90% surface metallization coverage.

OSTI ID:
323944
Report Number(s):
CONF-980705-; ISSN 0018-9499; TRN: 99:004464
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 45, Issue 6Pt1; Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Dec 1998
Country of Publication:
United States
Language:
English