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Title: Raman and photoluminescence studies on intrinsic and Cr-doped ZnSe single crystals

Book ·
OSTI ID:323889
; ; ;  [1]; ;  [2]
  1. Univ. of Puerto Rico, San Juan (Puerto Rico). Dept. of Physics
  2. Fisk Univ., Nashville, TN (United States)

Single crystals of ZnSe, with varying amounts of Cr doping have been studied using Raman and photoluminescence (PL) spectroscopy. The Cr-doped samples show the existence of a coupling mechanism of longitudinal optical (LO) phonons of ZnSe with hole-plasmons. The dependence of intensity ratio of LO and transverse optical (TO) mode on temperature and excitation wavelength, has been attributed to the interaction of the field of LO phonons with the surface electric field in the depletion layer. The interaction of discrete phonons with the electronic continuum of conduction band in ZnSe is responsible for the shift of Raman peaks. The large electron capture cross-section of deep-level Cr{sup 2+} and Cr{sup 1+} impurities is inhibitive for the observation of band-to-band PL transition at {approximately} 2.7 eV in ZnSe:Cr.

Sponsoring Organization:
National Science Foundation, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
OSTI ID:
323889
Report Number(s):
CONF-971201-; TRN: IM9912%%207
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: 1998; Related Information: Is Part Of Semiconductors for room-temperature radiation detector applications 2; James, R.B. [ed.] [Sandia National Labs., Livermore, CA (United States)]; Schlesinger, T.E. [ed.] [Carnegie Mellon Univ., Pittsburgh, PA (United States)]; Siffert, P. [ed.] [Lab. PHASE/CNRS, Strasbourg (France)]; Dusi, W. [ed.] [Inst. TESRE/CNR, Bologna (Italy)]; Squillante, M.R. [ed.] [Radiation Monitoring Devices, Inc., Watertown, MA (United States)]; O`Connell, M. [ed.] [Dept. of Energy, Washington, DC (United States)]; Cuzin, M. [ed.] [LETI/CEA, Grenoble (France)]; PB: 681 p.; Materials Research Society symposium proceedings, Volume 487
Country of Publication:
United States
Language:
English