Plasma deposition and interface control in low temperature processing of thin film solar cells
- State Univ. of New York, Amherst, NY (United States). Dept. of Electrical and Computer Engineering
Plasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon ({mu} c-Si) films were obtained by controlling the H{sub 2} dilution of 2% SiH{sub 4}/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% efficient) were achieved by inserting a thin {mu}-c-Si layer in the above structure.
- OSTI ID:
- 323636
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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