Surface morphology of LPE SiGe layers grown on (100)Si substrates
Conference
·
OSTI ID:323634
- Max-Planck-Inst. fuer Festkoerperforschung, Stuttgart (Germany)
- Max-Planck-Inst. fuer Metallforschung, Stuttgart (Germany)
The authors have investigated the surface morphology of thick SiGe layers grown on Si(100) substrates. SiGe layers containing different Ge concentrations (from 0 to 16 at.%) and having thickness of about 15{micro}m are prepared by liquid phase epitaxy (LPE) method using various growth conditions. The wavelength of undulation of SiGe layers is found to be increasing when the authors adopt low cooling rates during LPE process. The roughness of the layer does not show any significant change with cooling rate.
- OSTI ID:
- 323634
- Report Number(s):
- CONF-971201--
- Country of Publication:
- United States
- Language:
- English
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