Spontaneous Pattern Formation on Ion Bombarded Si(001)

Journal Article · Sun Feb 28 23:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.2330· OSTI ID:321986

Erlebacher, J; Aziz, M J ^[1]; Chason, E; Sinclair, M B; Floro, J A ^[2]

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1. Harvard University, Division of Engineering and Applied Sciences, Cambridge, Massachusetts 02138 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Spectroscopic light scattering was used to monitor periodic ripple evolution on Si(001) {ital inthinspthinspsitu} during Ar{sup +} sputtering. Analysis indicates that under high flux the concentration of mobile species on the surface is temperature and ion flux independent. This is due to an effect of ion collision cascades on the concentration of mobile species. We thereby measure the migration energy on the surface to be 1.2{plus_minus}0.1 eV . The technique is generalizable to any material, including high temperature and insulating materials for which surface migration energies are notoriously difficult to measure. {copyright} {ital 1999} {ital The American Physical Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 321986
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 11 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
LIGHT SCATTERING
RADIATION EFFECTS
SILICON
SPUTTERING
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE