Microscopic study of the hydrogen diffusion in III-V semiconductors

Book · Thu Dec 31 00:00:00 EST 1998

OSTI ID:308106

Burchard, A; Deicher, M; Knopf, M; Stoetzler, A ^[1]; Forkel-Wirth, D ^[2]; Magerle, R ^[3]; Fedoseyev, V N; Mishin, V I ^[4]

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1. Univ. Konstanz (Germany). Fakultaet fuer Physik
2. CERN/PPE, Geneva (Switzerland)
3. Univ. Bayreuth (Germany). Physikalische Chemie
4. Inst. of Spectroscopy, Troitzk (Russian Federation)

The authors report on experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, GaAs, and InAs. Using the radioactive acceptor {sup 117}Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of {sup 117}Cd to {sup 117}In, H is no longer bound to an acceptor and can diffuse freely. This diffusion has been observed by perturbed {gamma}{gamma} angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed. First results on the diffusion of hydrogen will be discussed.

• OSTI ID: 308106
• Report Number(s): CONF-980405-; TRN: IM9907%%32
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 13-17 Apr 1998; Other Information: PBD: 1998; Related Information: Is Part Of Hydrogen in semiconductors and metals; Nickel, N.H. [ed.] [Hahn-Meitner-Inst., Berlin (Germany)]; Jackson, W.B. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Bowman, R.C. [ed.] [Jet Propulsion Lab., Pasadena, CA (United States)]; Leisure, R.G. [ed.] [Colorado State Univ., Fort Collins, CO (United States)]; PB: 469 p.; Materials Research Society symposium proceedings, Volume 513
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
HYDROGEN
DIFFUSION
PERMEABILITY
INDIUM PHOSPHIDES
GALLIUM ARSENIDES
INDIUM ARSENIDES
CRYSTAL STRUCTURE
PASSIVATION
EXPERIMENTAL DATA