Vacancy defects in solid-phase epitaxial grown layers of self-implanted Si
- Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831 (United States)
- Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (United States)
- Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, Ibaraki 305 (Japan)
A method for preparing shallow dopant distributions via solid-phase epitaxial growth (SPEG) following amorphization by low-energy Si self-ion implantation leaves defects that can lead to unwanted dopant impurity diffusion. The double implant method for SPEG [O. W. Holland {ital et al.}, J. Electron. Mater. {bold 25}, 99 (1996)] uses both low- and high-energy Si self-ion implantation to remove most of the interstitials. Nevertheless, we find that measurable crystalline imperfections remain following the SPEG annealing step. Measurements of defect profiles using variable-energy positron spectroscopy show that there are divacancy-impurity complexes in the SPEG layer and V{sub 6} and larger vacancy clusters near the SPEG-crystalline interface. These measurements should be useful for modeling the diffusion of dopant atoms and for fine tuning the double implant parameters. {copyright} {ital 1999 American Institute of Physics.}
- OSTI ID:
- 306245
- Journal Information:
- Applied Physics Letters, Vol. 74, Issue 7; Other Information: PBD: Feb 1999
- Country of Publication:
- United States
- Language:
- English
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