Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

Conference · Wed Dec 31 00:00:00 EST 1997

OSTI ID:304401

Yazawa, Y; Tamura, K; Watahiki, S; Kitatani, T; Ohtsuka, H; Warabisako, T ^[1]

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1. Hitachi Ltd., Tokyo (Japan). Central Research Lab.

Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

• OSTI ID: 304401
• Report Number(s): CONF-970953-; TRN: IM9905%%93
• Resource Relation: Conference: 26. IEEE photovoltaic specialists conference, Anaheim, CA (United States), 29 Sep - 3 Oct 1997; Other Information: PBD: 1997; Related Information: Is Part Of Conference record of the twenty sixth IEEE photovoltaic specialists conference -- 1997; PB: 1477 p.
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CASCADE SOLAR CELLS
GALLIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDE SOLAR CELLS
GALLIUM ARSENIDE SOLAR CELLS
SILICON SOLAR CELLS
FABRICATION
SPECTRAL RESPONSE
QUANTUM EFFICIENCY