The application of low-frequency glow discharge to high-rate a-Si:H deposition

Conference · Tue Dec 30 23:00:00 EST 1997

OSTI ID:304340

Budaguan, B G; Sazonov, A Yu ^[1]; Aivazov, A A ^[2]; Berdnikov, A E; Popov, A A ^[3]

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1. Moscow Inst. of Electronic Technology (Russian Federation). Dept. of Materials Science
2. Unisil Corp., Mountain View, CA (United States)
3. Russian Academy of Sciences, Yaroslavl (Russian Federation). Inst. of Microelectronics

Using the low frequency (55 kHz) glow discharge technique (LF PECVD), the a-Si:H films were deposited with high growth rate (up to 25 {angstrom}/s) and good electronic and optical properties in spite of inhomogeneous structure. In this work, the authors investigated the plasma properties and the film structure to clarify the mechanisms controlling the growth rate. The plasma and the films were investigated with using of optical emission spectroscopy, IR-spectroscopy, atomic force microscopy. It is concluded that the increase of deposition rate in LF glow discharge is caused by the increased flux of SiH{sub n} radicals due to approach of SiH{sub 4} decomposition range to film growth surface, whereas the ion bombardment of growing film provides device quality electronic properties.

• OSTI ID: 304340
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
FABRICATION
OPTICAL PROPERTIES
SILICON
SILICON SOLAR CELLS