Improved {micro}c-Si p-layer and a-Si i-layer materials using VHF plasma deposition
Book
·
OSTI ID:304327
- Energy Conversion Devices, Inc., Troy, MI (United States)
Microcrystalline Si p-layers have been widely used in a-Si solar cell technology to achieve high efficiency. To further improve the solar cell performance, the authors have studied the deposition of high quality {micro}c-Si p-layer material using a modified very high frequency (VHF) plasma enhanced CVD process and consequently have improved the solar cell current. This improvement was primarily in the blue response which leads to a 6--10% improvement in the overall solar cell efficiency. In addition, the authors have explored the deposition of a-Si at high rates using VHF plasma, and compared these VHF i-layers with RF plasma deposited i-layers. With improved deposition conditions, VHF intrinsic layers deposited at a rate up to 15 {angstrom}/s show similar device performance and light stability to VHF and RF i-layers deposited at low rates, and show higher stability than RF i-layers deposited at high rates in the same deposition system. A 10.9% single-junction solar cell was fabricated using a VHF deposited i-layer.
- Sponsoring Organization:
- National Renewable Energy Lab., Golden, CO (United States)
- OSTI ID:
- 304327
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
Similar Records
VHF plasma deposition of {mu}c-Si p-layer materials
Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers
Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report
Conference
·
Tue Jul 01 00:00:00 EDT 1997
·
OSTI ID:20085566
Open circuit voltage improvement of high-deposition-rate microcrystalline silicon solar cells by hot wire interface layers
Journal Article
·
Mon Aug 15 00:00:00 EDT 2005
· Applied Physics Letters
·
OSTI ID:20702603
Development of high, stable-efficiency triple-junction a-Si alloy solar cells. Final technical report
Technical Report
·
Tue Mar 31 23:00:00 EST 1998
·
OSTI ID:595611