Electrodeposited CuInSe{sub 2} thin film devices

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:304321

Raffaelle, R P; Mantovani, J G; Friedfeld, R B ^[1]; Bailey, S G; Hubbard, S M ^[2]

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1. Florida Inst. of Tech., Melbourne, FL (United States). Dept. of Physics and Space Sciences
2. NASA Lewis Research Center, Cleveland, OH (United States)

The authors have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide (CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. The authors have produced both p and n type CIS thin films, as well as a CIS pn junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the pn junction.

• OSTI ID: 304321
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
ELECTRICAL PROPERTIES
ELECTRODEPOSITION
EXPERIMENTAL DATA
FABRICATION
GRADED BAND GAPS
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES