Effect of CdS annealing in (CdCl{sub 2} + CdS) atmosphere on CdTe cells
- Korea Advanced Inst. of Science and Technology, Taejon (Korea, Republic of). Dept. of Materials Science and Engineering
- Korea Univ., Seoul (Korea, Republic of). Dept. of Materials Science and Engineering
To increase grain size, solution-grown CdS films were annealed at 560 C in a (CdCl{sub 2} + CdS) atmosphere, instead of CdCl{sub 2} only environment. CdS was used to prevent the evaporation of CdS from the films. After 5 min annealing, the grain size increased from 10 nm to 100 nm and the surface morphology was very smooth and densely packed. The optical transmittance was greatly improved near E{sub g}, compared to that of CdS films annealed at 400 C for 30 min in H{sub 2}. The efficiency of the CdTe solar cell was improved by fabricating with the CdS layer annealed in a (CdCl{sub 2} + CdS) atmosphere. The increase of the efficiency was mainly due to the increase of fill factor, which might be due to the decrease of defects at CdTe bulk and the CdS/CdTe interface.
- OSTI ID:
- 304314
- Report Number(s):
- CONF-970953--
- Country of Publication:
- United States
- Language:
- English
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