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Optimizing 2D passivation for enhancing performance of fully air-processed carbon electrode-based perovskite solar cells

Journal Article · · EES Solar
DOI:https://doi.org/10.1039/D5EL00099H· OSTI ID:3029981
Air-processed carbon-based perovskite solar cells (C-PSCs) offer scalable and cost-effective photovoltaic manufacturing but face efficiency loss compared to metal-contact perovskite solar cells. Surface passivation of three-dimensional (3D) perovskites with two-dimensional (2D) perovskite layers has emerged as a promising strategy to enhance device performance. However, the mechanisms by which 2D perovskites more effectively improve C-PSC efficiency and stability remain underexplored. This study investigates the efficacy of 2D/3D heterostructures using n-hexylammonium bromide (C6Br), phenethylammonium iodide (PEAI), and n-octylammonium iodide (OAI) as surface passivators for C-PSCs. C-PSCs treated with C6Br achieved a champion power conversion efficiency (PCE) of 21.0%. This enhancement is attributed to superior defect passivation, improved charge extraction, and suppressed non-radiative recombination. Transient ion-drift characterization demonstrates that C6Br and OAI reduce ionic conductivity by 2–3 orders of magnitude, correlating with enhanced operational stability under continuous illumination. Our findings highlight the role of short-chain bromide cations (C6Br) in optimizing halide-mediated defect healing and interfacial band alignment, positioning 2D-passivated C-PSCs as viable competitors to conventional metal-contact perovskite solar cells.
Research Organization:
Arizona State Uni., Scottsdale, AZ (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
Grant/Contract Number:
EE0009833
Other Award/Contract Number:
ECCS-2413632
MOMS-2330728
TI-2329871
DMR-2330738
CMMI-2226918
DMREF-2323766
ECCS-2339233
OSTI ID:
3029981
Journal Information:
EES Solar, Journal Name: EES Solar Journal Issue: 4 Vol. 1; ISSN 3033-4063
Publisher:
Royal Society of ChemistryCopyright Statement
Country of Publication:
United States
Language:
English

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