Strain and Defect-Tailored Magnetotransport in NiCo2O4 Thin Films and Freestanding Membranes
- University of Nebraska−Lincoln, NE (United States)
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Brookhaven National Laboratory (BNL), Upton, NY (United States); Pohang University of Science and Technology (POSTECH) (Korea, Republic of)
- Pohang University of Science and Technology (POSTECH) (Korea, Republic of)
Magnetic spinel NiCo2O4 is promising for developing spintronic applications due to its high magnetic Curie temperature, high spin polarization, fast spin dynamics, and strain-tunable magnetic anisotropy, while its electronic and magnetic properties depend sensitively on epitaxial strain and disorder. Here, we use epitaxial NiCo2O4 thin films and freestanding NiCo2O4 membranes as model systems to reveal the complex interplay of strain and defects in determining the metallicity and magnetotransport properties of the ferrimagnetic spinel. NiCo2O4 on perovskite substrates and NiCo2O4 membranes exhibit insulating behaviors and spin canting, in sharp contrast to the metallic NiCo2O4 films on spinel substrates that possess strong perpendicular magnetic anisotropy. Anisotropic magnetoresistance studies provide critical information about disorder-induced spin scattering and strain-induced tetragonal magnetocrystalline anisotropy, which is corroborated by comprehensive electron microscopy characterizations. Here, our study presents a promising venue for designing flexible magnetic memory, sensor, and spintronic applications.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States); University of Nebraska−Lincoln, NE (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)
- Grant/Contract Number:
- SC0012704; SC0026103
- Other Award/Contract Number:
- OIA-2044049
ECCS: 2025298
- OSTI ID:
- 3029257
- Report Number(s):
- DOE-UNL-SC26103--1
- Journal Information:
- ACS Nano, Journal Name: ACS Nano Journal Issue: 14 Vol. 20; ISSN 1936-086X; ISSN 1936-0851
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
anisotropic magnetoresistance
anomalous Hall effect
epitaxy
freestanding spinel membranes
magnetic properties
magnetocrystalline anisotropy
membranes
oxides
phase separation
thin films
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
anisotropic magnetoresistance
anomalous Hall effect
epitaxy
freestanding spinel membranes
magnetic properties
magnetocrystalline anisotropy
membranes
oxides
phase separation
thin films