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Total Ionizing Dose Effects on Gallium Oxide MOSFETs

Conference ·
DOI:https://doi.org/10.2172/3027437· OSTI ID:3027437
 [1];  [2];  [2];  [3];  [3];  [3];  [4];  [3];  [1];  [5];  [1]
  1. Vanderbilt University
  2. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
  3. AFRL
  4. Air Force Research Laboratory
  5. External Affiliation
+ Show Author Affiliations
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
NNSA; USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525;
OSTI ID:
3027437
Report Number(s):
SAND2025-03789C; 1772105
Resource Type:
Conference poster
Conference Information:
Hardened Electronics and Radiation Technology (HEART) - Monterey, California, United States of America - April - 2025
Country of Publication:
United States
Language:
English

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