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Electrical Switching and Imaging of Antiferromagnetic Spins in Perovskite Epitaxial Thin Films

Journal Article · · ACS Nano
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  1. The Ohio State University, Columbus, OH (United States)
  2. Helmholtz-Zentrum Berlin für Materialien und Energie (Germany)
  3. Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.
Research Organization:
Helmholtz-Zentrum Berlin für Materialien und Energie (Germany); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); The Ohio State University, Columbus, OH (United States)
Sponsoring Organization:
NSF MRSEC; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0001304
OSTI ID:
3013539
Alternate ID(s):
OSTI ID: 3000517
Journal Information:
ACS Nano, Journal Name: ACS Nano Journal Issue: 1 Vol. 20; ISSN 1936-086X; ISSN 1936-0851
Publisher:
American Chemical Society (ACS)Copyright Statement
Country of Publication:
United States
Language:
English

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