GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy

Zhang, Diandian; Eldose, Nirosh M.; Baral, Dinesh; Stanchu, Hryhorii; Benamara, Mourad; Du, Wei; Salamo, Gregory J.; Yu, Shui-Qing

doi:10.1116/6.0005075

GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy

Journal Article · Wed Jan 07 00:00:00 EST 2026 · Journal of Vacuum Science and Technology A

DOI:https://doi.org/10.1116/6.0005075· OSTI ID:3012808

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University of Arkansas, Fayetteville, AR (United States)

We report the epitaxial growth of high quality GeSn alloys with Sn compositions up to 21.25 ± 1% by effusion-cell molecular beam epitaxy (MBE). Achieving such a high Sn content with effusion cells is particularly significant, since these sources typically impose stronger radiative heating on the substrate, which is a factor long considered a major obstacle to high-Sn GeSn epitaxy. Contrary to the prevailing assumption that high growth rates are good for suppressing Sn segregation, we demonstrate that carefully controlled low fluxes, combined with stable ultra-low substrate temperatures, enable significant Sn incorporation even under effusion-cell conditions. Structural analyses by high-resolution x-ray diffraction, reciprocal space mapping, atomic force microscopy, and transmission electron microscopy confirm sharp interfaces, high crystallinity, and smooth surfaces at high Sn contents. Furthermore, these findings establish the feasibility of MBE-grown high-Sn GeSn even under diffusion cells, thereby broadening opportunities for Si-compatible photonic and quantum devices.

View Accepted Manuscript (DOE)

Research Organization:: University of Arkansas, Fayetteville, AR (United States)

Sponsoring Organization:: Office of Naval Research (ONR); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0023412

Other Award/Contract Number:: N00014-24-1-2651
N00014-23-1-2872

OSTI ID:: 3012808

Alternate ID(s):: OSTI ID: 3022274

Journal Information:: Journal of Vacuum Science and Technology A, Journal Name: Journal of Vacuum Science and Technology A Journal Issue: 2 Vol. 44; ISSN 1520-8559; ISSN 0734-2101

Publisher:: American Vacuum Society / AIPCopyright Statement

Country of Publication:: United States

Language:: English

References (21)

Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18% Kormoš, L.; Kratzer, M.; Kostecki, K. Surface and Interface Analysis, Vol. 49, Issue 4 https://doi.org/10.1002/sia.6134	journal	September 2016
Alloy Stability of Ge1−xSnx with Sn Concentrations up to 17% Utilizing Low-Temperature Molecular Beam Epitaxy Schwarz, Daniel; Funk, Hannes S.; Oehme, Michael Journal of Electronic Materials, Vol. 49, Issue 9 https://doi.org/10.1007/s11664-020-08188-6	journal	May 2020
Silicon Photonics: A Review of Recent Literature Soref, Richard Silicon, Vol. 2, Issue 1 https://doi.org/10.1007/s12633-010-9034-y	journal	January 2010
Instabilities in crystal growth by atomic or molecular beams Politi, Paolo; Grenet, Geneviève; Marty, Alain Physics Reports, Vol. 324, Issue 5-6 https://doi.org/10.1016/S0370-1573(99)00046-0	journal	February 2000
Study of strain evolution mechanism in Ge1−xSnx materials grown by low temperature molecular beam epitaxy Wan, Fengshuo; Xu, Chi; Wang, Xiaoyu Journal of Crystal Growth, Vol. 577 https://doi.org/10.1016/j.jcrysgro.2021.126399	journal	January 2022
Si–Ge–Sn alloys: From growth to applications Wirths, S.; Buca, D.; Mantl, S. Progress in Crystal Growth and Characterization of Materials, Vol. 62, Issue 1 https://doi.org/10.1016/j.pcrysgrow.2015.11.001	journal	March 2016
Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn Oehme, Michael; Kostecki, Konrad; Schmid, Marc Thin Solid Films, Vol. 557 https://doi.org/10.1016/j.tsf.2013.10.064	journal	April 2014
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn Maia de Oliveira, Fernando; M. Eldose, Nirosh; Baral, Dinesh Crystal Growth & Design, Vol. 25, Issue 15 https://doi.org/10.1021/acs.cgd.5c00461	journal	July 2025
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission Abernathy, Grey; Ojo, Solomon; Said, Abdulla Scientific Reports, Vol. 13, Issue 1 https://doi.org/10.1038/s41598-023-45916-4	journal	October 2023
Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness Bratland, K. A.; Foo, Y. L.; Spila, T. Journal of Applied Physics, Vol. 97, Issue 4 https://doi.org/10.1063/1.1848188	journal	February 2005
Semiconductor molecular‐beam epitaxy at low temperatures Eaglesham, D. J. Journal of Applied Physics, Vol. 77, Issue 8 https://doi.org/10.1063/1.358597	journal	April 1995
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence Ghetmiri, Seyed Amir; Du, Wei; Margetis, Joe Applied Physics Letters, Vol. 105, Issue 15 https://doi.org/10.1063/1.4898597	journal	October 2014
Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors Moutanabbir, O.; Assali, S.; Gong, X. Applied Physics Letters, Vol. 118, Issue 11 https://doi.org/10.1063/5.0043511	journal	March 2021
Kinetics of short-range order formation in GeSn alloy: MBE vs CVD Liang, Yunfan; West, Damien; Zhang, Shengbai Applied Physics Letters, Vol. 126, Issue 20 https://doi.org/10.1063/5.0270281	journal	May 2025
Recent progress in GeSn growth and GeSn-based photonic devices Zheng, Jun; Liu, Zhi; Xue, Chunlai Journal of Semiconductors, Vol. 39, Issue 6 https://doi.org/10.1088/1674-4926/39/6/061006	journal	May 2018
Roadmap on silicon photonics Thomson, David; Zilkie, Aaron; Bowers, John E. Journal of Optics, Vol. 18, Issue 7 https://doi.org/10.1088/2040-8978/18/7/073003	journal	June 2016
Electrically Injected Mid-Infrared GeSn Laser on Si Operating at 140 K Acharya, Sudip; Stanchu, Hryhorii; Kumar, Rajesh IEEE Journal of Selected Topics in Quantum Electronics, Vol. 31, Issue 1: SiGeSn Infrared Photon https://doi.org/10.1109/JSTQE.2024.3430060	journal	January 2025
Development of GeSn epitaxial films with strong direct bandgap luminescence in the mid-wave infrared region using a commercial chemical vapor deposition reactor Rosson, Nicholas; Acharya, Sudip; Fischer, Alec M. Journal of Vacuum Science & Technology B, Vol. 42, Issue 5 https://doi.org/10.1116/6.0003798	journal	September 2024
Recent advances in light sources on silicon Han, Yu; Park, Hyundai; Bowers, John Advances in Optics and Photonics, Vol. 14, Issue 3 https://doi.org/10.1364/AOP.455976	journal	August 2022
Electrically injected GeSn lasers with peak wavelength up to 2.7 μm Zhou, Yiyin; Ojo, Solomon; Wu, Chen-Wei Photonics Research, Vol. 10, Issue 1 https://doi.org/10.1364/PRJ.443144	journal	December 2021
Review of Si-Based GeSn CVD Growth and Optoelectronic Applications Miao, Yuanhao; Wang, Guilei; Kong, Zhenzhen Nanomaterials, Vol. 11, Issue 10 https://doi.org/10.3390/nano11102556	journal	September 2021

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GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy

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