Increased Voltage in CdSe Solar Cells by Mitigation of Charge Carrier Trapping Due to Se Vacancies
Journal Article
·
· Advanced Materials Technologies
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Colorado State Univ., Fort Collins, CO (United States); First Solar, Santa Clara, CA (United States). California Technology Center
- Colorado State Univ., Fort Collins, CO (United States)
- First Solar, Santa Clara, CA (United States). California Technology Center
- Univ. of Washington, Seattle, WA (United States)
Cadmium selenide (CdSe), with a 1.7 eV bandgap, is a promising high-bandgap semiconductor for tandem solar cells, yet device efficiencies are hindered by rapid minority carrier recombination. Here, in this study, polycrystalline CdSe solar cells are investigated using radiative emission spectroscopy, time-resolved photoluminescence, and density functional theory, revealing fast (sub-nanosecond) minority carrier trapping by selenium vacancy-related defect states with densities of (5–50) × 1017 cm−3, limiting carrier mobility and increasing recombination. By reducing absorber thickness to ≈0.5 µm, trapping effects are mitigated, achieving a record open-circuit voltage of 917 mV, a 165 mV improvement over prior reports. These findings clarify the role of Se vacancies in limiting CdSe solar cell performance and provide insights applicable to CdSe and CdSeTe thin-film photovoltaics. This work advances understanding of defect-mediated losses in II–VI semiconductors and suggests pathways for improving solar cell performance through defect control.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- National Science Foundation (NSF); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- Grant/Contract Number:
- AC36-08GO28308; EE0008556; EE0008974
- Other Award/Contract Number:
- 38525
52778
DMR‐2308979
- OSTI ID:
- 3011909
- Report Number(s):
- NREL/JA--5900-96400
- Journal Information:
- Advanced Materials Technologies, Journal Name: Advanced Materials Technologies Journal Issue: 3 Vol. 11; ISSN 2365-709X
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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