Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

Chard, Ava R.; Sambur, Justin B.

doi:10.1016/j.coelec.2025.101703

Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

Journal Article · Mon May 19 00:00:00 EDT 2025 · Current Opinion in Electrochemistry

DOI:https://doi.org/10.1016/j.coelec.2025.101703· OSTI ID:3010738

Chard, Ava R. ^[1]; ^[1]

Colorado State University, Fort Collins, CO (United States)

The flatband potential (V_fb) is a critical parameter in semiconductor electrochemistry, defining the potential at which no excess charge exists at the semiconductor/electrolyte interface. It serves as a key reference for interpreting charge transfer kinetics and current–voltage behavior. However, conventional methods like Mott–Schottky analysis fail for atomically thin 2D materials due to the breakdown of the depletion approximation. This perspective examines the limitations of traditional V_fb measurements for 2D semiconductors and the experimental challenges that arise. To address these issues, we propose using scanning electrochemical cell microscopy (SECCM) to spatially resolve the potential of zero charge (V_pzc), equivalent to V_fb. This approach mitigates sample heterogeneity issues, such as pinholes or multilayer defects, and offers a pathway to more accurate electrochemical characterization. Ultimately, this method will enhance understanding of current–potential behavior in 2D materials, supporting the design of advanced systems for photoelectrocatalysis, energy conversion, and sensing.

View Accepted Manuscript (DOE)

Research Organization:: Colorado State University, Fort Collins, CO (United States)

Sponsoring Organization:: National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0021189

OSTI ID:: 3010738

Alternate ID(s):: OSTI ID: 2566915

Journal Information:: Current Opinion in Electrochemistry, Journal Name: Current Opinion in Electrochemistry Vol. 52; ISSN 2451-9103

Publisher:: Elsevier BVCopyright Statement

Country of Publication:: United States

Language:: English

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potential of zero charge
scanning electrochemical cell microscopy

Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

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