Sputter-Coated TiO2 Films as Passivation and Hole Transfer Layers for Improved Energy Conversion with Solar Fuel WO3/CuWO4 Photoanodes
Journal Article
·
· ACS Applied Materials and Interfaces
- Universidade Estadual Paulista─UNESP, Sao Paulo (Brazil)
- Instituto Tecnológico de Aeronáutica─ITA, Sao Paulo (Brazil)
- University of California, Davis, CA (United States)
Atomic layer deposited (ALD) “leaky” TiO2 have gained interest as charge-selective protection layers for semiconductor solar fuel electrodes. Here we demonstrate the use of sputter-deposited TiO2 layers as hole selective contacts for WO3/CuWO4 type 2 heterojunction water oxidation photoanodes for the first time. TiO2 protection layers with varying thicknesses (2 to 128 nm) were deposited using the RF magnetron sputtering technique. The resulting TiO2 films are amorphous based on Raman spectroscopy and powder XRD. Photoelectrochemical scans and Vibrating Kelvin probe photovoltage spectroscopy show that 2-8 nm TiO2 layers nearly double the photocurrent to 0.97 mA cm-2 under AM 1.5 illumination (19% AQE at 350 nm), increase the surface photovoltage signal by 25%, and increase the WO3/CuWO4 bandgap. These effects can be attributed to the selectivity of TiO2 for photoholes. Additionally, SPV data suggest that TiO2 overlayers suppress copper-based surface recombination defects. Reduced photocurrent and the photovoltage are seen in thicker TiO2 films (16 to 128 nm) as a result of an increasing hole transfer resistance and because of light shading effects according to photoaction spectra. The TiO2 films also improve the stability of the WO3/CuWO4 photoelectrodes, allowing nearly constant O2 evolution over 3 hours after an initial 20-35% loss. Overall, this work establishes RF magnetron sputtering as a useful method to install amorphous TiO2 passivation layers for improved WO3/CuWO4 solar fuel photoelectrodes. Furthermore, we show how the combination of PEC with SPV measurements provides insight into the function of the TiO2 coatings.
- Research Organization:
- University of California, Davis, CA (United States)
- Sponsoring Organization:
- Fundação de Amparo à Pesquisa do Estados de São Paulo–FAPESP; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0015329
- Other Award/Contract Number:
- 2022/06542-9
2023/04793-7
- OSTI ID:
- 3005194
- Journal Information:
- ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 50 Vol. 16; ISSN 1944-8244; ISSN 1944-8252
- Publisher:
- American Chemical Society (ACS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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